• RF Mosfet Amplifier Module#Ra60h4452m1#12.5-Volt#40- to 520-MHz
  • RF Mosfet Amplifier Module#Ra60h4452m1#12.5-Volt#40- to 520-MHz
  • RF Mosfet Amplifier Module#Ra60h4452m1#12.5-Volt#40- to 520-MHz
  • RF Mosfet Amplifier Module#Ra60h4452m1#12.5-Volt#40- to 520-MHz
  • RF Mosfet Amplifier Module#Ra60h4452m1#12.5-Volt#40- to 520-MHz
  • RF Mosfet Amplifier Module#Ra60h4452m1#12.5-Volt#40- to 520-MHz

RF Mosfet Amplifier Module#Ra60h4452m1#12.5-Volt#40- to 520-MHz

Manufacturing Technology: Discrete Device
Material: Element Semiconductor
Type: RF Mosfet Amplifier Module
Package: to-59
Signal Processing: Analog Digital Composite and Function
Application: Mitsubishi RF Mosfet Module
Customization:
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Guangdong, China
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Overview

Basic Info.

Model NO.
RA60H4452M1
Model
Ra60h4452m1-101
Batch Number
2023+
Brand
Mitsubishi
Sub GHz
Lora/Lorawan
Serial Interfaces
Spi, Uart
Transport Package
Bulk
Specification
250/box
Trademark
MITSUBISHI
Origin
Original
Production Capacity
1

Product Description

Product Description
 
The RA60H4452M1 is a 60-watt RF MOSFET Amplifier
Module for 12.5-volt mobile radios that operate in the 440- to
520-MHz range.
The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the nominal output signal (Pout=60W) attenuates up to 60 dB. The output power and the drain current increase as the gate voltage increases. The output power and the drain current increase substantially with the gate voltage around 0V(minimum). The nominal output power becomes available at the state that VGG is 4V (typical) and 5V (maximum).  At VGG=5V, the typical gate currents are 5mA.This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power.


FEATURES 
• Enhancement-Mode MOSFET Transistors (IDD≅0  @ VDD=12.5V, VGG=0V) 
• Pout>60W, ηT>40%  @ VDD=12.5V, VGG=5V, Pin=50mW 
• Broadband Frequency Range: 440-520MHz  
• Metal shield structure that makes the improvements of spurious radiation simple • Low-Power Control Current IGG=5mA (typ)  @ VGG=5V
 • Module Size: 67 x 18 x 9.9 mm
 • Linear operation is possible by setting the quiescent drain current with the gate voltages and controlling the output power with the input power.
RF Mosfet Amplifier Module#Ra60h4452m1#12.5-Volt#40- to 520-MHz


 




APPLICATIONS:
Mobile phones
Notebooks/Laptops
Portable devices
Internet of Things (IoT)
High speed serial interface like USB-C, USB 3.1, MIPI, and HDMI 2.0
Computers
Printe
Communication systems
Video equipment
 
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Type Integrated Circuit, Microcontroller, Diodes, Sensors.
Transistors,IGBT,etc.
Package Reel/ Tube / Tray / Box
Status Original Brand New
Application Electronic products,PCB BOM Full Service
Lead Time 3-5 working days
Shipping By DHL.UPS.FedEx TNT ,etc
More Details Please contact us
 
company profile:

Simentor is a leading independent electronic components distributor.We specialize in Electronic components distributor for 15 years,

(IC , Transistor, Diodes, Capacitor, Resistor, Relay, Connector,PCB)

 ·   IC .         (TI, MAXIM,MICROCHIP,AOS,POWER,ST,INFINEON, SINGAMATER)  
·  Diode,          (Vishay,Diodes,MDD,JSCT) 
· Transistor,        (Fairchild,ON) 
· Inductor,             (MURATA,SUMIDA,Sunlor,) 
· Connector ,       (TE, MOLEX,KET,JST,YAZAKI) 
· Capacitor,      (MURATA,YAGEO,PANASONIC,LELON,RUBYCON, NICHICON,AVX) 
· Resistor.       (YAGEO,Unit ohms,Royalohm, VISHAY)
 
Need help finding a part? We can help!

 
Product packing

RF Mosfet Amplifier Module#Ra60h4452m1#12.5-Volt#40- to 520-MHz
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RF Mosfet Amplifier Module#Ra60h4452m1#12.5-Volt#40- to 520-MHzRF Mosfet Amplifier Module#Ra60h4452m1#12.5-Volt#40- to 520-MHz


Warranty for all shipments
RF Mosfet Amplifier Module#Ra60h4452m1#12.5-Volt#40- to 520-MHzRF Mosfet Amplifier Module#Ra60h4452m1#12.5-Volt#40- to 520-MHz

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Trading Company
Number of Employees
7
Year of Establishment
2013-04-27