Original Infineon IGBT FF100r12rt4 IGBT Module in Stock 1200V 100A Fast Shipping

• Customization: Available
• Conductive Type: N-Channel
• Integration: GSI
• Model NO.: FF100R12RT4
• Memory Type: Other
• Shape: Other
• Technics: Trenchstop
• Transport Package: Carton
• Trademark: Infineon
• Origin: Germany

Product Description

 

 

 

 

Part Number: FF100R12RT4	Manufacturer: Infineon Technologies
Description: The FF100R12RT4 is a high-performance 1200V, 100A dual-switch IGBT module. It utilizes Infineon's advanced TRENCHSTOP™ IGBT4 and Emitter Controlled 4 diode technology, housed in a standard 34mm footprint. This module is engineered for low switching losses and high reliability, making it ideal for industrial power conversion applications .	Configuration: Dual Switch (Half-Bridge)
	Package: 34mm Module (AG-34MM-1) with Isolated Base Plate
	Mounting Type: Chassis Mount / Panel Mount
Key Features & Benefits	Applications
• High Efficiency: Features low saturation voltage (Low VCEsat) and low switching losses to improve inverter efficiency .	• Motor Drives & Controls: Variable frequency drives for industrial machinery .
• Robust Thermal Performance: Extended operating temperature (Tvj op = 150°C) and VCEsat with positive temperature coefficient for easy paralleling .	• Renewable Energy: Solar (PV) inverters and wind power converters .
• Reliable Design: Isolated copper base plate ensures excellent thermal management and system reliability .	• Uninterruptible Power Supplies (UPS): High-power UPS systems for data centers and critical infrastructure .
• Standard Housing: Industry-standard 34mm footprint allows for direct mechanical replacement and flexible system design .	• Industrial Heating & Welding: Induction furnaces, welders, and high-frequency converters .
	• Commercial Vehicles: Traction drives for construction and agricultural vehicles (CAV) .
Absolute Maximum Ratings (Tc=80°C)	Electrical Characteristics (Per Switch)
Collector-Emitter Voltage (Vces)	1200 V
DC Collector Current (Ic)	100 A
Peak Collector Current (Icp)	200 A
Total Power Dissipation (Pc)	555 W
Operating Temperature (Tvj op)	-40°C to +150°C
Isolation Voltage	2500 V (typical for 34mm modules)
VCEsat (Typical @ 15V, 100A)	2.15 V
Input Capacitance (Cies)	6.3 nF
Fall Time (Toff)	0.4 µs (400 ns)
Thermal Resistance (Rth(j-c))	0.27 K/W

 

Chip feature advantages:

1.Superior short-circuit current capacity;

2.Superior overload impact resistance;

3.Low switching loss;

4.decreased saturation pressure;

 

II. Product Application

The chip can be used to package IGBT single tube products, module products,suitable for:

induction heating
inverter power supply
UPS
frequency converter controller
servo controller, chopper

speed control
photovoltaic and energy storage inverter
SVG/APF
welding machine
commercial induction

cooker
electric vehicle, etc.