High Efficiency Qmff100r12af IGBT Module 100A 1200V Original Stock

• Customization: Available
• Conductive Type: N-Channel
• Integration: GSI
• Model NO.: QMFF100R12AF
• Memory Type: Other
• Shape: Other
• Technics: Trenchstop
• Transport Package: Carton
• Trademark: Infineon
• Origin: Germany

Product Description

 

Product Name	High Power IGBT Module (Insulated Gate Bipolar Transistor)
Model Number	QMFF100R12AF
Manufacturer	Replacement Part / Generic High-Quality Equivalent
Condition	Brand New & Original / In Stock
Payment Terms	T/T, Western Union, PayPal etc.
Technical Specifications
Parameter	Value
Collector-Emitter Voltage (V<sub>CES</sub>)	1200
Collector Current (I<sub>CPM</sub>)	200
Power Dissipation (P<sub>tot</sub>)	650
Junction Temperature (T<sub>j max</sub>)	150 (or 175)
Isolation Voltage	2500

 

 

 

 

Chip feature advantages:

1.Superior short-circuit current capacity;

2.Superior overload impact resistance;

3.Low switching loss;

4.decreased saturation pressure;

 

II. Product Application

The chip can be used to package IGBT single tube products, module products,suitable for:

induction heating
inverter power supply
UPS
frequency converter controller
servo controller, chopper

speed control
photovoltaic and energy storage inverter
SVG/APF
welding machine
commercial induction

cooker
electric vehicle, etc.