Qmff150r12af IGBT Module 150A 1200V Original Fast Switching Power Semiconductor

• Customization: Available
• Conductive Type: N-Channel
• Integration: GSI
• Model NO.: QMFF150R12AF
• Memory Type: Other
• Shape: Other
• Technics: Trenchstop
• Transport Package: Carton
• Trademark: Infineon
• Origin: Germany

Product Description

Model Number	QMFF150R12AF
Brand	Infineon (or Compatible High-Power Semiconductor)
Category	IGBT (Insulated Gate Bipolar Transistor) Module
Configuration	Three-Phase Bridge / Six-Pack
Electrical Characteristics
Collector-Emitter Voltage	1200V
Continuous Collector Current	150A (at case temperature Tc=80∘CTc=80∘C)
Peak Collector Current	300A
Saturation Voltage	Low V<sub>CE(sat)</sub> for high efficiency (Typ. 1.7V - 2.1V)
Switching Frequency	Optimized for 1kHz to 20kHz operation
Technical Features
Chip Technology	Trench-FS (Trench Field Stop) IGBT technology
Diode	Fast & soft recovery anti-parallel diodes
Isolation Voltage	2500V AC (1 minute)
Temperature Rating	Maximum Junction Temperature Tvjop=150∘CTvjop=150∘C
Mechanical & Mounting
Mounting Style	Screw Mount / Chassis Mount
Terminal Type	Screw terminals or Press-fit pins (User to confirm)
Applications
Main Applications	- AC Motor Drives / Servo Drives
	- UPS (Uninterruptible Power Supplies) Systems
	- Welding Converters
	- Industrial Heating and Soldering
	- Renewable Energy Inverters (Solar/Wind)

 

 

 

 

Chip feature advantages:

1.Superior short-circuit current capacity;

2.Superior overload impact resistance;

3.Low switching loss;

4.decreased saturation pressure;

 

II. Product Application

The chip can be used to package IGBT single tube products, module products,suitable for:

induction heating
inverter power supply
UPS
frequency converter controller
servo controller, chopper

speed control
photovoltaic and energy storage inverter
SVG/APF
welding machine
commercial induction

cooker
electric vehicle, etc.