RF Jfet Transistor#Tim8596-8# GaAs Fet Internally Matched, 9GHz, 60W

• Manufacturing Technology: Discrete Device
• Material: Element Semiconductor
• Type: RF Jfet
• Package: 2-11c1b
• Signal Processing: Analog Digital Composite and Function
• Application: Mitsubishi RF Mosfet Module
• Model NO.: TIM8596-8
• Model: Ra60h4452m1-101
• Batch Number: 2023+
• Brand: TOSHIBA
• Sub GHz: Lora/Lorawan
• Serial Interfaces: Spi, Uart
• Transport Package: Bulk
• Specification: 250/box
• Trademark: Toshiba
• Origin: Original
• Production Capacity: 1

Product Description

Product Description

 
FEATURES
BROAD BAND INTERNALLY MATCHED FET
HIGH POWER
  P1dB= 39.5dBm at 8.5G Hz to 9.6GHz

HIGH GAIN
  G1dB= 6.0dB at 8.5GHz to 9.6GHz

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Type	Integrated Circuit, Microcontroller, Diodes, Sensors. Transistors,IGBT,etc.
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Status	Original Brand New
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