| Customization: | Available |
|---|---|
| Conductive Type: | Bipolar Integrated Circuit |
| Integration: | MSI |
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The DN3135N8-G is a N-channel MOSFET from Diodes Incorporated, designed for high-efficiency power management applications. Below are the key details and features of this device:
Voltage Ratings:
Drain-Source Voltage (V<sub>DS</sub>): 30V.
Gate-Source Voltage (V<sub>GS</sub>): ±20V.
Current Ratings:
Continuous Drain Current (I<sub>D</sub>): 60A.
Pulsed Drain Current (I<sub>DM</sub>): Higher peak current handling capability.
On-Resistance (R<sub>DS(on)</sub>):
Low R<sub>DS(on)</sub>: Typically 3.5 mΩ (at V<sub>GS</sub> = 10V).
Ensures minimal power loss and high efficiency.
Gate Charge (Q<sub>g</sub>):
Low gate charge for fast switching performance.
Package:
PowerDI® 5 (8-pin): Compact and thermally efficient package.
Designed for high-power density applications.
Applications:
DC-DC Converters: Synchronous buck converters, step-down regulators.
Motor Control: Brushed and brushless DC motor drives.
Power Management: Load switches, battery protection circuits.
Automotive Systems: Power distribution and control.
Thermal Performance:
Low thermal resistance for efficient heat dissipation.
Suitable for high-current applications.
Protection Features:
Robust design for overcurrent and overtemperature conditions.
Dimensions: 5.0 mm x 6.0 mm.
Low Profile: Optimized for space-constrained designs.
Thermal Pad: Enhances heat dissipation for high-power operation.
Portable Devices: Power management in smartphones, tablets, and laptops.
Industrial Systems: Motor drives, power supplies, and inverters.
Automotive Electronics: Power distribution modules, LED drivers.
Consumer Electronics: High-efficiency power converters.
High current handling capability.
Low R<sub>DS(on)</sub> for reduced conduction losses.
Compact and thermally efficient package.
Suitable for high-frequency switching applications.
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