Original Infineon FF50r12rt4 1200V 50A IGBT Power Module

• Customization: Available
• Conductive Type: N-Channel
• Integration: GSI
• Model NO.: FF50R12RT4
• Memory Type: Other
• Shape: Other
• Technics: Trenchstop
• Transport Package: Carton
• Trademark: Infineon
• Origin: Germany

Product Description

 

Basic Info

Model: FF50R12RT4; Type: Dual IGBT Module;

 

Continuous Collector Current (Ic)	50A
Collector-Emitter Voltage (Vce)	1200V
Total Power Dissipation (Ptot)	285W
Gate-Emitter Voltage (Vge)	±20V
Operating Temperature	-40ºC ~ +150ºC
Package Type	AG-34MM (Chassis/Screw Mount)
Configuration	Dual IGBT

Key Parameters	50A Continuous Current, 1200V Voltage, -40ºC~150ºC Operating Temp, AG-34MM Package, 285W Power Dissipation
Product Advantages	Low Switching/Conduction Losses, High Thermal Stability, Anti-Vibration Design, Strong Surge Withstand, Long Lifespan
Main Applications	Solar Inverters, Motor Drives, UPS, Welding Machines, EV Chargers, Industrial Robots, Wind Power Converters
Supply & Service	In Stock & Fast Shipping, Factory Direct Price, Free Datasheet, Anti-Static Packaging, Bulk Customization Support

Chip feature advantages:

1.Superior short-circuit current capacity;

2.Superior overload impact resistance;

3.Low switching loss;

4.decreased saturation pressure;

 

II. Product Application

The chip can be used to package IGBT single tube products, module products,suitable for:

induction heating
inverter power supply
UPS
frequency converter controller
servo controller, chopper

speed control
photovoltaic and energy storage inverter
SVG/APF
welding machine
commercial induction

cooker
electric vehicle, etc.